PART |
Description |
Maker |
BLF6G22-180RN BLF6G22LS-180RN |
180 W LDMOS power transistor for base station applications at frequencies from 2000 MHz to 2200 MHz. Power LDMOS transistor S BAND, Si, N-CHANNEL, RF POWER, MOSFET Power LDMOS transistor BLF6G22-180RN<SOT502A (LDMOST)|<<http://www.nxp.com/packages/SOT502A.html<1<Always Pb-free,; Power LDMOS transistor BLF6G22-180RN<SOT502A (SOT502A)|<<http://www.nxp.com/packages/SOT502A.html<1<Always Pb-free,;
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NXP Semiconductors N.V.
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BLF6G13L-250P BLF6G13LS-250P |
Product description250 W LDMOS power transistor intended for CW applications at a frequency of 1.3 GHz. Power LDMOS transistor BLF6G13LS-250P<SOT1121B (CDFM4)|<<http://www.nxp.com/packages/SOT1121B.html<1<Always Pb-free,;
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NXP Semiconductors N.V.
|
PTF080601F PTF080601E PTF080601A PTF080601 |
LDMOS RF Power Field Effect Transistor 60 W, 860-960 MHz LDMOS射频功率场效应晶体管60瓦,860-960兆赫 LDMOS RF Power Field Effect Transistor 60 W 860-960 MHz LDMOS RF Power Field Effect Transistor 60 W/ 860-960 MHz
|
INFINEON[Infineon Technologies AG]
|
BLF6G22LS-180RN |
Power LDMOS Transistor
|
Philips Semiconductors
|
BLF8G27LS-100P-15 |
Power LDMOS transistor
|
NXP Semiconductors
|
BLP15M7160P-15 |
Power LDMOS transistor
|
NXP Semiconductors
|
BLF7G20L-160P |
Power LDMOS transistor
|
Philips Semiconductors
|
BLF7G15LS-200 |
Power LDMOS transistor
|
NXP Semiconductors N.V.
|
BLP05H6110XR-15 |
Power LDMOS transistor
|
NXP Semiconductors
|
BLA6G1011-200R |
Power LDMOS transistor
|
NXP Semiconductors
|